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参数资料
| 型号： | IRFR9220 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d-为200V，的Rds（on）\u003d 1.5ohm，身份证\u003d- 3.6A） |
| 文件页数： | 2/8页 |
| 文件大小： | 99K |
| 代理商： | IRFR9220 |
4-90
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR9220, IRFU9220
-200
-200
±
20
3.6
Refer to Peak Current Curve
Refer to UIS Curve
42
0.33
-55 to 150
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 2.2A, V
GS
= -10V (Figure 9)
V
DD
= -100V, I
D
= 3.9A,
R
L
= 24
, V
GS
= -10V,
R
GS
= 18
(Figures 13, 16, 17)
-200
-
-
V
Gate to Threshold Voltage
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
-
-
-25
μ
A
μ
A
-
-
-250
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
1.500
W
Turn-On Time
-
-
50
ns
Turn-On Delay Time
-
8.8
-
ns
Rise Time
-
27
-
ns
Turn-Off Delay Time
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
gd
Q
gs
-
7.3
-
ns
Fall Time
-
19
-
ns
Turn-Off Time
-
-
50
ns
Total Gate Charge
V
GS
= 0 to -10V
V
DD
= -160V,
I
D
= 3.9A,
R
L
= 41
I
G(REF)
= 1.45mA
-
20
-
nC
Gate to Drain Charge
-
11
-
nC
Gate to Source Charge
-
3.3
-
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
550
-
pF
Output Capacitance
-
110
-
pF
Reverse Transfer Capacitance
-
33
-
pF
Thermal Resistance Junction to Case
-
-
3.00
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
I
SD
= -3.6A
I
SD
= -3.6A, dI
SD
/dt = -100A/
μ
s
-
-
-6.3
V
Diode Reverse Recovery Time
-
150
300
ns
Reverse Recovery Charge
0.97
2.0
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
IRFR9220, IRFU9220
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| IRFR9220PBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220T_R4941 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TR | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRL | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRLPBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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