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参数资料
| 型号： | IRFRU9214 |
| 厂商： | International Rectifier |
| 英文描述： | HA1L-M1C53-G L6 Ovrsz ILL PB Rnd Flsh Mom SPDT 12V LED Sldr |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d- 250V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 2.7A） |
| 文件页数： | 1/10页 |
| 文件大小： | 107K |
| 代理商： | IRFRU9214 |
IRFR/U9214
HEXFET
Power MOSFET
PRELIMINARY
V
DSS
= -250V
R
DS(on)
= 3.0
I
D
= -2.7A
9/23/97
Parameter
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
P-Channel
l
Surface Mount (IRFR9214)
l
Straight Lead (IRFU9214)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
Parameter
Max.
-2.7
-1.7
-11
50
0.40
± 20
100
-2.7
5.0
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
260 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1658A
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU9214 | Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) |
| IRFR9214 | P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
| IRFRU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFR9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFRU9310 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFS 3004-7PPBF | 制造商:International Rectifier 功能描述:Bulk |
| IRFS 3004PBF | 制造商:International Rectifier 功能描述:Bulk |
| IRFS 3006-7PPBF | 制造商:International Rectifier 功能描述:Bulk |
| IRFS 3107-7PPBF | 制造商:International Rectifier 功能描述:Bulk |
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