参数资料
型号: IRFS33N15DTRLP
厂商: International Rectifier
文件页数: 1/12页
文件大小: 0K
描述: MOSFET N-CH 150V 33A D2PAK
标准包装: 800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 33A
开态Rds(最大)@ Id, Vgs @ 25° C: 56 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 90nC @ 10V
输入电容 (Ciss) @ Vds: 2020pF @ 25V
功率 - 最大: 3.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
PD- 95537
IRFB33N15DPbF
SMPS MOSFET
IRFS33N15DPbF
IRFSL33N15DPbF
HEXFET ? Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
V DSS
150V
R DS(on) max
0.056 ?
I D
33A
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C OSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB33N15D
D 2 Pak
IRFS33N15D
TO-262
IRFSL33N15D
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
33
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
24
130
3.8
170
1.1
± 30
4.4
A
W
W/°C
V
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw ?
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Typical SMPS Topologies
l
Telecom 48V input Active Clamp Forward Converter
Notes ?
through ?
are on page 11
www.irf.com
1
7/21/04
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