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参数资料
| 型号： | IRFZ44VZ |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 6/13页 |
| 文件大小： | 301K |
| 代理商： | IRFZ44VZ |
IRFZ44VZS_L
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.061
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
9.6
12
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
25
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Qg
Total Gate Charge
–––
43
65
Qgs
Gate-to-Source Charge
–––
11
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
–––
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
62
–––
td(off)
Turn-Off Delay Time
–––
35
–––
ns
tf
Fall Time
–––
38
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1690
–––
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
Coss
Output Capacitance
–––
1870
–––
Coss
Output Capacitance
–––
260
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
57
(Body Diode)
A
ISM
Pulsed Source Current
–––
230
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 48V, = 1.0MHz
VGS = 0V, VDS = 0V to 48V
f
VGS = 10V
e
VDD = 30V
ID = 34A
RG = 12
TJ = 25°C, IS = 34A, VGS = 0V e
TJ = 25°C, IF = 34A, VDD = 30V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A
e
VDS = VGS, ID = 250A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 34A
ID = 34A
VDS = 48V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
S
D
G
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相关代理商/技术参数 |
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| IRFZ44VZL | 功能描述:MOSFET N-CH 60V 57A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFZ44VZLPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
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| IRFZ44VZSHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 57A 3PIN D2PAK - Bulk |
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