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参数资料
| 型号： | IRG4BC20MD-S |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 18 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 345K |
| 代理商： | IRG4BC20MD-S |
IRG4BC20MD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
------
2.1
RθJC
Junction-to-Case - Diode
------
2.5
°C/W
RθCS
Case-to-Sink, flat, greased surface
------
0.50
------
RθJA
Junction-to-Ambient, typical socket mount
-----
80
Wt
Weight
------
2 (0.07)
------
g (oz)
Thermal Resistance
01/19/10
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
18
IC @ TC = 100°C
Continuous Collector Current
11
ICM
Pulsed Collector Current
36
A
ILM
Clamped Inductive Load Current
36
IF @ TC = 100°C
Diode Continuous Forward Current
7.0
tsc
Short Circuit Withstand Time
10
s
IFM
Diode Maximum Forward Current
36
A
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
60
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Rugged: 10sec short circuit capable at VGS=15V
Low VCE(on) for 4 to 10kHz applications
IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
Industry standard D2Pak package
Lead-Free
Benefits
Offers highest efficiency and short circuit
capability for intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
For Low EMI designs- requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Driver IC's
Allows simpler gate drive
W
www.irf.com
1
Short Circuit Rated
Fast IGBT
D2Pak
PD -95564A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4BC20MDS_07 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4BC20MD-SPBF | 功能描述:IGBT 晶体管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4BC20MD-STRL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20MD-STRR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20S | 功能描述:IGBT STD 600V 19A TO-220AB RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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