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参数资料
| 型号： | IRG4BC30S-STRL |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB |
| 中文描述： | 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|至263AB |
| 文件页数： | 1/8页 |
| 文件大小： | 135K |
| 代理商： | IRG4BC30S-STRL |
Parameter
Max.
600
70
41
140
140
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
IRG4BAC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PROVISIONAL
Parameter
Typ.
–––
0.50
–––
TBD
Max.
0.64
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
1
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry Super-220 (TO-273AA) package
Generation 4 IGBT offers highest efficiency
Optimized for specific application conditions
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.28V
@V
GE
= 15V, I
C
= 41A
1/19/2000
Super-220
(TO-273AA)
N-channel
PD - 93771
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4BC30S-STRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB |
| IRG4BAC50S | Insulated Gate Bipolar Transistors (IGBTs)(标准速度绝缘栅型双极型晶体管) |
| IRG4C30W-S | |
| IRG4CC10KB | |
| IRG4CC10SB | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4BC30S-STRLP | 功能描述:IGBT 模块 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IRG4BC30S-STRR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB |
| IRG4BC30U | 功能描述:IGBT UFAST 600V 23A TO-220AB RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4BC30UD | 制造商:International Rectifier 功能描述:IGBT TO-220 |
| IRG4BC30UDHR | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 23A 3PIN TO-220AB - Rail/Tube |
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