参数资料
型号: IRG4MC30F
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 15A I(C) | TO-254AA
中文描述: 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|第15A一(c)|至254AA
文件页数: 1/8页
文件大小: 141K
代理商: IRG4MC30F
IRG4MC30F
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
V
CES
= 600V
V
CE(on) max
=1.7V
@V
GE
= 15V, I
C
= 15A
Parameter
Max.
600
28
15
112
112
± 20
75
30
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
A
V
W
-55 to + 150
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Absolute Maximum Ratings
12/18//01
www.irf.com
1
Fast Speed IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
Units
°C/W
Test Conditions
1.67
PD -94313B
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相关代理商/技术参数
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