参数资料
型号: IRG4MC30F
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 15A I(C) | TO-254AA
中文描述: 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|第15A一(c)|至254AA
文件页数: 5/8页
文件大小: 141K
代理商: IRG4MC30F
www.irf.com
5
IRG4MC30F
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
V
I
= 400V
= 15A
CC
C
1
10
100
0
400
800
1200
1600
2000
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
ies
C
oes
C
res
0
10
20
30
40
50
RG, Gate Resistance (
)
1.35
1.40
1.45
1.50
1.55
T
VCC = 480V
VGE = 15V
TJ = 25
°
C
I C = 15A
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (
°
C)
0.1
1
10
100
T
RG = 7.5
VGE = 15V
VCC = 480V
IC = 30A
IC = 15A
IC = 7.5A
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