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参数资料
| 型号： | IRG4MC50F |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA |
| 中文描述： | 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 35A条一（c）|至254AA |
| 文件页数： | 2/8页 |
| 文件大小： | 141K |
| 代理商： | IRG4MC50F |
2
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IRG4MC30F
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
ts
t
d(on)
t
r
t
d(off)
t
r
E
ts
L
C
+L
E
77
12
24
42
30
300
300
2.0
25
20
450
550
3.0
–––
I
C
= 15A
V
CC
= 300V
V
GE
= 15V
T
J
= 25°C
I
C
= 15A, V
CC
= 480V
V
GE
= 15V, R
G
= 7.5
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T
J
= 125°C,
I
C
= 15A, V
CC
= 480V
V
GE
= 15V, R
G
= 7.5
Energy losses include "tail"
See Fig. 13, 14
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
nC
See Fig. 8
mJ
ns
mJ
nH
C
ies
C
oes
C
res
Notes:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1100 –––
–––
74
–––
14
–––
–––
pF
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
–––
18
–––
–––
0.63
–––
–––
–––
–––
–––
–––
3.0
–––
–––
-11
14
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
–––
1.7
2.2
2.7
6.0
–––
–––
50
1000
±100
V
V
V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 0V, I
C
= 1.0 A
V
GE
= 0V, I
C
= 1.0 mA
I
C
= 15A V
GE
= 15V
I
C
= 28A
I
C
= 15A , T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 1.0 mA
mV/
°
C V
CE
= V
GE
, I
C
= 250 μA
S
V
CE
≥
15V, I
C
= 15A
V
GE
= 0V, V
CE
= 480V
V
GE
= 0V, V
CE
= 480V, T
J
= 125
°
C
nA
V
GE
= ±20V
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
100μH, R
G
= 7.5
,
(See fig. 13a)
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