参数资料
型号: IRG4MC50F
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA
中文描述: 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 35A条一(c)|至254AA
文件页数: 3/8页
文件大小: 141K
代理商: IRG4MC50F
www.irf.com
3
IRG4MC30F
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
1
10
100
1000
5
10
15
20
V , Gate-to-Emitter Voltage (V)
I
C
V = 50V
5μs PULSE WIDTH
T = 25 C
T = 150 C
1
10
100
1000
0.1
1
10
V , Collector-to-Emitter Voltage (V)
I
C
V = 15V
20μs PULSE WIDTH
T = 25 C
T = 150 C
0.1
1
10
100
f , Frequency ( kHz )
0
10
20
30
40
L
For both:
Duty cycle : 50%
Tj = 125
°
C
Tsink = 90
°
C
Gate drive as specified
Power Dissipation = 19W
Triangular wave:
Clamp voltage:
80% of rated
60% of rated
voltage
Ideal diodes
Square wave:
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