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参数资料
| 型号： | IRG4PH40FD |
| 厂商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小时 |
| 文件页数： | 5/35页 |
| 文件大小： | 112K |
| 代理商： | IRG4PH40FD |
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Fit Rate / Equivalent Device Hours
λ
= Proportion allowed system failures
Time period
X
1
X
10
9
=
FITS
No. of devices
In the case of the example,
λ
=
0.01 Failures
720 Hours
X
1
=
10
9
=
14 FITS
1000 Devices
or 14 FITs or 14 failures per 10
9
devices hours.
Traditionally, reliability results have been presented in terms of Mean-Time-To-Failure
or Median-Time-To-Failure.
While these results have their value, they do not
necessarily tell the designer what he most needs to know. For example, the Median-
Time-To-Failure tells the engineer how long it will take for half a particular lot of
devices to fail. Clearly no designer wishes to have a 50% failure rate within a
reasonable equipment lifetime. Of greater interest, therefore, is the time to failure of a
much smaller percentage of devices say 1% or 0.1%. For example, in a given
application one failure per hundred units over five years is an acceptable failure rate
for the equipment, the designer knows that time to accumulate 1% failure of that
components per unit, then no more than 0.1% of the components may fail in five
years. Therefore, the IGBT / CoPack reliability or operating-life data is presented in
terms of the time it will take to produce a prescribed number of failures under given
operating conditions.
To obtain a perspective of failure rate from an example, let us assume that an
electronic system contains 1,000 semiconductor devices, and that it can tolerate 1%
system failures per month. The equation for the device failure is:
IGBT / CoPack
Quarterly Reliability Report
Page 5 of 35
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PH40MD | Fit Rate / Equivalent Device Hours |
| IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PF50WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PF50WD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40K | 功能描述:IGBT UFAST 1200V 30A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4PH40KD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40KD-E | 制造商:International Rectifier 功能描述:1200V 18.000A COPAK 247 / IGBT : JA / DI |
| IRG4PH40KDPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40K-E | 制造商:International Rectifier 功能描述:1200V 30.000A TO-247 / IGBT : JA / DISCR |
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