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参数资料
| 型号： | IRG4PH40FD |
| 厂商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小时 |
| 文件页数： | 6/35页 |
| 文件大小： | 112K |
| 代理商： | IRG4PH40FD |
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Using IGBT Reliability Information
Classic Bathtub Curve for failure rate of solid state devices
λ
( t )
Infant
Failures
Wearout
Failures
Random Failures
Log Time
Reliability is the probability that a semiconductor device will perform its
specified function in a given environment for a specified period of time.
Reliability is quality over time & environmental conditions.
Reliability can be defined as a probability of failure-free performance of a
required function, under a specified environment, for a given period of time.
The reliability of semiconductors has been extensively studied and the data
generated from these works is widely used in industry to estimate the
probabilities of system lifetimes. The reliability of a specific semiconductor
device is unique to the technology process used in fabrication and to the
external stress applied to the device.
In order to understand the reliability of specific product like the IGBT it is
useful to determine the failure rate associated with each environmental stress
that IGBT's encounter.
The values reported in this report are at a 60% upper confidence limit and the
equivalent device hours at state of working temperature of 90°C. It has been
shown that the failure rate of semiconductors in general. when followed for a
long period of time, exhibits what has been called a "Bathtub Curve" when
plotted against time for a given set of environmental conditions.
t
L
IGBT / CoPack
Quarterly Reliability Report
Page 6 of 35
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PH40MD | Fit Rate / Equivalent Device Hours |
| IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PF50WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PF50WD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40K | 功能描述:IGBT UFAST 1200V 30A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4PH40KD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40KD-E | 制造商:International Rectifier 功能描述:1200V 18.000A COPAK 247 / IGBT : JA / DI |
| IRG4PH40KDPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40K-E | 制造商:International Rectifier 功能描述:1200V 30.000A TO-247 / IGBT : JA / DISCR |
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