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参数资料
| 型号： | IRG4PH40UD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） |
| 文件页数： | 2/10页 |
| 文件大小： | 217K |
| 代理商： | IRG4PH40UD |
IRG4PH40KD
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
94
—
14
—
37
—
50
—
31
—
96
—
220
—
1.31
—
1.12
—
2.43
10
—
Conditions
I
C
= 15A
V
CC
= 400V
V
GE
= 15V
140
22
55
—
—
140
330
—
—
2.8
—
nC
See Fig.8
T
J
= 25
°
C
I
C
= 15A, V
CC
= 800V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
CC
= 720V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 10
, V
CPK
< 500V
T
J
= 150
°
C, See Fig. 10,11,18
I
C
= 15A, V
CC
= 800V
V
GE
= 15V, R
G
= 10
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 14 I
F
= 8.0A
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 15 V
R
= 200V
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 16 di/dt = 200Aμs
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
49
33
290
440
5.1
13
1600
77
26
63
106
4.5
6.2
140
335
133
85
—
—
—
—
—
—
—
—
—
95
160
8.0
11
380
880
—
—
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
0.37
—
2.74
—
3.29
—
2.53
3.0
—
—
-3.3
8.0
12
—
—
—
—
—
2.6
—
2.4
—
—
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 15A
I
C
= 30A
I
C
= 15A, T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 15A
μA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150
°
C
V
I
C
= 8.0A
I
C
= 8.0A, T
J
= 125
°
C
nA
V
GE
= ±20V
—
—
3.4
—
—
6.0
—
—
250
3000
3.3
3.1
±100
V
V/
°
C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25
°
C (unless otherwise specified)
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