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参数资料
| 型号： | IRG4PH40UD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） |
| 文件页数： | 5/10页 |
| 文件大小： | 217K |
| 代理商： | IRG4PH40UD |
IRG4PH40KD
www.irf.com
5
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
20
Q , Total Gate Charge (nC)
40
60
80
100
0
4
8
12
16
20
V
G
V
I
= 400V
= 15A
CC
C
1
10
100
0
500
1000
1500
2000
2500
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
res
C
oes
C
ies
0
10
R , Gate Resistance (Ohm)
20
30
40
50
2.0
2.2
2.4
2.6
2.8
3.0
T
V = 480V
V = 15V
T = 25 C
I = 15A
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
0.1
1
10
100
T , Junction Temperature ( C )
T
R = Ohm
V = 15V
V = 480V
I = A
30
I = A
15
I = A
7.5
相关PDF资料 |
PDF描述 |
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| IRG4PH40KPBF | Short Circuit Rated UltraFast IGBT |
| IRG4PH40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE |
| IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| IRG4PH50KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
| IRG4PH50 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40UD2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-E | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-EP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40UD2PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD-EPBF | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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