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参数资料
| 型号： | IRG4PH40UD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） |
| 文件页数： | 3/10页 |
| 文件大小： | 217K |
| 代理商： | IRG4PH40UD |
IRG4PH40KD
www.irf.com
3
0.1
1
10
100
0
5
10
15
20
25
f, Frequency (KHz)
L
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
For both:
Duty cycle: 50%
TJ
°
C
Tsink
°
C
Gate drive as specified
Power Dissipation = W
60% of rated
voltage
I
Ideal diodes
Square wave:
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I
C
V = 15V
20μs PULSE WIDTH
T = 25 C
°
T = 150 C
1
10
100
4
6
8
10
12
14
V , Gate-to-Emitter Voltage (V)
I
C
V = 50V
5μs PULSE WIDTH
T = 25 C
T = 150 C
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| IRG4PH40KPBF | Short Circuit Rated UltraFast IGBT |
| IRG4PH40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE |
| IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| IRG4PH50KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
| IRG4PH50 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40UD2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-E | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-EP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40UD2PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD-EPBF | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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