参数资料
型号: IRG4RC10KD
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
中文描述: 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典型.\u003d 2.39V,@和VGE \u003d 15V的,集成电路\u003d 5.0a中)
文件页数: 8/10页
文件大小: 190K
代理商: IRG4RC10KD
IRG4RC10KD
8
www.irf.com
Same type
D.U.T.
430μF
80%
Fig. 18a
-
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b
-
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
Vce ie dt
t1
t2
5% Vce
Ic
Ipk
Vcc
10% Ic
Vce
t1
t2
DUT VO LTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIO DE REVERSE
RECOVERY ENERGY
tx
10% Vcc
Eon =
Erec =
t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
W AVEFO RMS
Ic
Vpk
Irr
10% Irr
Vcc
trr
Q rr =
trr
tx
id dt
Ic dt
Fig. 18c
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vce Ic dt
t=5μs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
E = (E +E )
V
V
ge
相关PDF资料
PDF描述
IRG4RC10 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10K INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
IRG4RC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
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