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参数资料
| 型号： | IRGP4055PBF |
| 厂商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等离子沟道IGBT |
| 文件页数： | 1/7页 |
| 文件大小： | 255K |
| 代理商： | IRGP4055PBF |
www.irf.com
1
05/10/06
IRGP4055PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ 110A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.70
270
150
V
V
A
°C
Key Parameters
G
C
E
Gate
Collector
Emitter
GC
E
TO-247AC
C
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
0.24
–––
Max.
0.48
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
°C/W
Max.
±30
60
270
255
102
2.04
110
300
-40 to + 150
10lb in (1.1N m)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGP4062D-EPBF | 功能描述:IGBT 晶体管 600V UltraFast IGBT 5uS 24A 1.65 VCE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4062DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4062-EPBF | 制造商:International Rectifier 功能描述:IGBT 600V 48A 250W TO-247AD 制造商:International Rectifier 功能描述:TUBE / 600V 24A TO-247AD 制造商:International Rectifier 功能描述:Transistor IGBT N-ch 600V 24A TO-247AD |
| IRGP4063D1-EPBF | 制造商:International Rectifier 功能描述:600V 48A COPAK-247AD - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 100A 330W TO-247AD 制造商:International Rectifier 功能描述:IR IGBT 600V 600V 48A COPAK-247AD |
| IRGP4063D1PBF | 制造商:International Rectifier 功能描述:600V 48A COPAK-247AC - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 100A 330W TO247AC 制造商:International Rectifier 功能描述:IR IGBT 600V 600V 48A COPAK-247AC 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube |
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