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参数资料
| 型号： | IRGP50B60PD1 |
| 厂商： | International Rectifier |
| 英文描述： | SMPS IGBT |
| 中文描述： | 的SMPS IGBT |
| 文件页数： | 1/10页 |
| 文件大小： | 468K |
| 代理商： | IRGP50B60PD1 |
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP50B60PD1
1
www.irf.com
6/7/04
Features
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
E
G
n-channel
C
V
CES
= 600V
V
CE(on)
typ. = 2.00V
@ V
GE
= 15V
I
C
= 33A
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 61m
I
D
(FET equivalent) = 50A
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
TO-247AC
G
C
E
SMPS IGBT
Absolute Maximum Ratings
Parameter
Max.
600
75
45
150
150
40
15
60
±20
390
156
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
g (oz)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGP50B60PD1_06 | 制造商:IRF 制造商全称:International Rectifier 功能描述:WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP50B60PD1-EP | 功能描述:IGBT 晶体管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP50B60PD1PBF | 功能描述:IGBT 晶体管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP50B60PDPBF | 功能描述:IGBT 晶体管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP8B120UD | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR |
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