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参数资料
型号： IRGP50B60PD1
厂商： International Rectifier
英文描述： SMPS IGBT
中文描述： 的SMPS IGBT
文件页数： 2/10页
文件大小： 468K
代理商： IRGP50B60PD1
IRGP50B60PD1
2
www.irf.com
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 2.00V and I
C
=33A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 28 μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
R
G
Internal Gate Resistance
Min.
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
0.31
1.7
2.00
2.45
2.60
3.20
4.0
-10
41
5.0
1.0
1.30
1.20
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 500μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
—
1MHz, Open Collector
2.35
I
C
= 33A, V
GE
= 15V
2.85
V
I
C
= 50A, V
GE
= 15V
2.95
I
C
= 33A, V
GE
= 15V, T
J
= 125°C
3.60
I
C
= 50A, V
GE
= 15V, T
J
= 125°C
5.0
V
I
C
= 250μA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
—
S
V
CE
= 50V, I
C
= 33A, PW = 80μs
500
μA
V
GE
= 0V, V
CE
= 600V
—
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
1.70
V
I
F
= 15A, V
GE
= 0V
1.60
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig
4, 5,6,8,9
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
7,8,9
V
FM
Diode Forward Voltage Drop
10
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
C
oes
eff.
Effective Output Capacitance (Time Related)
C
oes
eff. (ER)
Effective Output Capacitance (Energy Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
205
70
30
255
375
630
30
10
130
11
580
480
1060
26
13
146
15
3648
322
56
215
163
Max. Units
308
105
45
305
445
750
40
15
150
15
700
550
1250
35
20
165
20
—
—
—
—
—
Ref.Fig
I
C
= 33A
V
CC
= 400V
V
GE
= 15V
I
C
= 33A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3
, L = 200μH
TJ = 25°C
17
nC
CT1
CT3
μJ
I
C
= 33A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 25°C
CT3
I
C
= 33A, V
CC
= 390V
μJ
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 125°C
I
C
= 33A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
V
GE
= 0V, V
CE
= 0V to 480V
16
pF
15
T
J
= 150°C, I
C
= 150A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
t
rr
Diode Reverse Recovery Time
—
—
—
—
—
—
42
74
80
220
4.0
6.5
60
120
180
600
6.0
10
ns
19
Q
rr
Diode Reverse Recovery Charge
nC
21
I
rr
Peak Reverse Recovery Current
A
19,20,21,22
CT5
Conditions
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