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参数资料
| 型号： | IRGP4065DPBF |
| 厂商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等离子沟道IGBT |
| 文件页数： | 1/7页 |
| 文件大小： | 354K |
| 代理商： | IRGP4065DPBF |
www.irf.com
1
6/13/06
IRGP4065DPbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead Free Package
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.75
205
150
V
V
A
°C
Key Parameters
G
C
E
Gate
Collector
Emitter
TO-247AC
E
G
n-channel
C
G
C
E
C
Absolute Maximum Ratings
Parameter
Units
V
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
A
Power Dissipation
W
Power Dissipation
Linear Derating Factor
W/°C
T
J
T
STG
Operating Junction and
°C
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
N
Thermal Resistance
Parameter
Typ.
–––
1.45
0.24
–––
6.0 (0.21)
Max.
0.80
2.5
–––
40
–––
Units
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Weight
°C/W
g (oz)
205
300
-40 to + 150
10lb in (1.1N m)
160
63
1.3
Max.
±30
40
70
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGP4065PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 70A 3PIN TO-247AC - Bulk |
| IRGP4066D-EPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4066D-EPBF | 制造商:International Rectifier 功能描述:TUBE / 600V UltraFast Copack Trench IGBT |
| IRGP4066DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4066-EPBF | 功能描述:IGBT 晶体管 600V Low VCEon Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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