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参数资料
| 型号： | IRGP4065DPBF |
| 厂商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等离子沟道IGBT |
| 文件页数： | 2/7页 |
| 文件大小： | 354K |
| 代理商： | IRGP4065DPBF |
2
www.irf.com
Half sine wave with duty cycle = 0.25, ton=1μsec.
R
θ
is measured at
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
Β
V
CES
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
300
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
Typ.
–––
0.23
1.20
1.35
1.75
2.35
2.00
–––
-11
2.0
50
–––
–––
26
62
20
30
26
170
160
30
28
250
310
–––
Max. Units
–––
–––
1.40
–––
2.10
–––
–––
5.0
–––
25
–––
100
-100
–––
–––
–––
—
—
—
—
—
—
—
—
–––
V
V/°C
V
V
GE(th)
V
GE(th)
/
T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
mV/°C
μA
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
nA
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
S
nC
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 150°C
ns
E
PULSE
Energy per Pulse
μJ
C
iss
C
oss
C
rss
L
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
–––
–––
2200
110
55
5.0
–––
–––
–––
–––
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
L
E
Internal Emitter Inductance
–––
13
–––
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
I
F(AV)
Average Forward Current at
T
C
=155°C
I
FSM
Non Repetitive Peak Surge Current
V
F
Forward Voltage
Min.
Typ.
Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.83
–––
27
40
30
106
2.2
5.3
100
1.25
1.0
35
–––
–––
–––
–––
–––
–––
A
V
T
J
= 155°C, PW = 6.0ms half sine wave
I
F
= 8A
I
F
= 8A, T
J
= 125°C
I
F
= 1A, di/dt = -50A/μs, V
R
=30V
t
rr
Reverse Recovery Time
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
di/dt = 200A/μs
V
R
= 200V
Q
rr
Reverse Recovery Charge
nC
I
rr
Peak Recovery Current
A
Static Collector-to-Emitter Voltage
V
CE(on)
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 500μA
–––
875
–––
V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
V
GE
= 30V
V
GE
= -30V
–––
975
–––
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 25°C
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 100°C
V
GE
= 0V
V
CE
= 30V
= 1.0MHz, See Fig.13
Conditions
V
GE
= 0V, I
CE
= 1 mA
Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 25A
V
GE
= 15V, I
CE
= 40A
V
GE
= 15V, I
CE
= 120A
V
GE
= 15V, I
CE
= 70A
Conditions
–––
–––
8.0
A
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