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参数资料
| 型号： | IRGPC40FD2 |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成电路\u003d 27A条） |
| 文件页数： | 2/6页 |
| 文件大小： | 250K |
| 代理商： | IRGPC40FD2 |
C-82
IRGPC40F
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
59
—
8.6
—
25
—
25
—
37
—
240
—
230
—
0.65
—
3.0
—
3.65
—
28
—
37
—
380
—
460
—
6.0
—
13
—
1500
—
190
—
20
Conditions
I
C
= 27A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
80
10
42
—
—
410
420
—
—
6.0
—
—
—
—
—
—
—
—
—
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
20
—
—
0.70
—
1.7
—
2.2
—
1.9
3.0
—
—
-12
9.2
12
—
—
—
—
1000
—
—
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 27A
I
C
= 49A
I
C
= 27A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 27A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ±20V
—
—
—
2.0
—
—
5.5
—
—
250
V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temp. Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
, ( See fig. 13a )
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