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参数资料
| 型号： | IRGPS40B120U |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 1/10页 |
| 文件大小： | 116K |
| 代理商： | IRGPS40B120U |
UltraFast IGBT
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR
Features
Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
@ V
GE
= 15V,
I
CE
= 40A, Tj=25°C
1/28/04
Absolute Maximum Ratings
Parameter
Max.
1200
80
40
160
160
± 20
595
238
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Benefits
Benchmark Efficiency for Motor Control.
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation.
Super
-
247
E
G
C
N-channel
Parameter
Min.
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
–––
40
–––
–––
–––
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
N(kgf)
g (oz)
nH
Wt
Le
Thermal Resistance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGPS40B120UD | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin (3+Tab) TO-274AA 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 80A, Transistor Type:IGBT, DC Collector Current:80A, Collect |
| IRGPS40B120UDP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS40B120UP | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPS40B120UPBF | 功能描述:IGBT 晶体管 1200V UltraFast 8-25kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS60B120KD | 制造商:International Rectifier 功能描述: |
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