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参数资料
型号： IRGPS40B120U
厂商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 绝缘栅双极晶体管
文件页数： 2/10页
文件大小： 116K
代理商： IRGPS40B120U
IRGPS40B120U
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6
7, 9
10
11
8, 9
10 ,11
Min. Typ. Max. Units
1200
–––
–––
0.40
–––
3.12
–––
3.39
–––
3.88
–––
4.24
4.0
5.0
-12
–––
30.5
–––
–––
–––
100 1200
–––
––– ±100
Conditions
–––
–––
3.40
3.71
4.39
4.79
6.0
––– mV/°C
–––
500
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
I
C
= 40A
I
C
= 50A
I
C
= 40A, T
J
= 125°C
I
C
= 50A, T
J
= 125°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
V
CE
= 50V, I
C
= 40A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
V
GE
= ±20V
V/°C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
340
–––
43
–––
165
––– 1400 1750
––– 1650 2050
––– 3050 3800
––– 1950 2300
––– 2200 2950
–––
4150 5250
–––
76
–––
39
–––
332
–––
25
––– 4300
–––
270
–––
160
Conditions
510
65
248
I
C
= 40A
V
CC
= 600V
V
GE
= 15V
I
C
= 40A, V
CC
= 600V
V
GE
= 15V,R
G
= 4.7
,
L =200μH
Ls = 150nH
nC
μJ
T
J
= 25°C
T
J
= 125°C
μJ
Energy losses include "tail" and
diode reverse recovery.
I
C
= 40A, V
CC
= 600V
V
GE
= 15V, R
G
= 4.7
L =200μH
Ls = 150nH, T
J
= 125°C
99
55
365
33
–––
–––
–––
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 160A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150°C, Vp =1200V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
pF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
17
CT1
CT4
WF1
WF2
12,14
13, 15
CT4
WF1
WF2
16
4
CT3
WF4
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
– V
μs
Ref.Fig.
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