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参数资料
| 型号： | IRGPS40B120U |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 10/10页 |
| 文件大小： | 116K |
| 代理商： | IRGPS40B120U |
IRGPS40B120U
10
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
1/04
Super-247 Package Outline
B
1.60 [.063]
MAX.
1
2
0.25 [.010]
B A
3
0.13 [.005]
2.35 [.092]
1.65 [.065]
2.15 [.084]
1.45 [.058]
5.50 [.216]
4.50 [.178]
E
E
3X1.45 [.058]
16.10 [.632]
15.10 [.595]
20.80 [.818]
19.80 [.780]
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
5.45 [.215]
2X
1.30 [.051]
0.70 [.028]
13.90 [.547]
13.30 [.524]
16.10 [.633]
15.50 [.611]
4
0.25 [.010]
B A
4
3.00 [.118]
A
2X R
SECTION E-E
1.30 [.051]
1.10 [.044]
3X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-274AA
NOTES:
3 - SOURCE
4 - DRAIN
2 - DRAIN
1 - GATE
3 - EMITTER
4 - COLLECTOR
1 - GATE
2 - COLLECTOR
LEAD ASSIGNMENTS
MOSFET
IGBT
C
LOGO
ASSEMBLY LOT CODE
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE A8B9
INTERNATIONAL RECTIFIER
IRFPS37N50A
A8B9
0020
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
PART NUMBER
TOP
Super-247 Part Marking Information
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGPS40B120UD | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin (3+Tab) TO-274AA 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 80A, Transistor Type:IGBT, DC Collector Current:80A, Collect |
| IRGPS40B120UDP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS40B120UP | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPS40B120UPBF | 功能描述:IGBT 晶体管 1200V UltraFast 8-25kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS60B120KD | 制造商:International Rectifier 功能描述: |
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