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参数资料
| 型号： | IRGPS60B120KD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 1/12页 |
| 文件大小： | 135K |
| 代理商： | IRGPS60B120KD |
IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Benefits
Benchmark Efficiency for Motor Control.
V
CES
= 1200V
V
CE(on)
typ. = 2.50V
@ V
GE
= 15V,
I
CE
= 60A, Tj=25°C
Parameter
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.41
–––
40
–––
–––
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
°C/W
N(kgf)
g (oz)
nH
Wt
Le
www.irf.com
Thermal Resistance
8/18/04
Absolute Maximum Ratings
Parameter
Max.
1200
105
60
240
240
120
60
240
± 20
595
238
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
1
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation.
Super
-
247
Motor Control Co-Pack IGBT
E
G
C
N-channel
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