参数资料
型号: IRGPS60B120KD
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 绝缘栅双极型晶体管,超快软恢复二极管
文件页数: 12/12页
文件大小: 135K
代理商: IRGPS60B120KD
IRGPS60B120KD
Super-247 Package Outline
12
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
B
1.60 [.063]
MAX.
1
2
0.25 [.010]
B A
3
0.13 [.005]
2.35 [.092]
1.65 [.065]
2.15 [.084]
1.45 [.058]
5.50 [.216]
4.50 [.178]
E
E
3X1.45 [.058]
16.10 [.632]
15.10 [.595]
20.80 [.818]
19.80 [.780]
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
5.45 [.215]
1.30 [.051]
0.70 [.028]
13.90 [.547]
13.30 [.524]
16.10 [.633]
15.50 [.611]
4
0.25 [.010]
B A
4
3.00 [.118]
2.00 [.079]
A
2X R
SECTION E-E
2X
1.30 [.051]
1.10 [.044]
3X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-274AA
NOTES:
3 - SOURCE
4 - DRAIN
2 - DRAIN
1 - GATE
3 - EMITTER
4 - COLLECTOR
1 - GATE
2 - COLLECTOR
LEAD ASSIGNMENTS
MOSFET
IGBT
C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100 μH, R
G
= 4.7
.
LOGO
ASSEMBLY LOT CODE
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE A8B9
INTERNATIONAL RECTIFIER
IRFPS37N50A
A8B9
0020
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
PART NUMBER
TOP
Super-247 Part Marking Information
相关PDF资料
PDF描述
IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRH7450SE TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)
IRH9130 RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)
相关代理商/技术参数
参数描述
IRGPS60B120KDP 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGPS60B120KDP 制造商:International Rectifier 功能描述:IGBT N CH 1200V 60A TO-247
IRGPS60B120KDP 制造商:International Rectifier 功能描述:IGBT
IRGR2B60KDPBF 制造商:International Rectifier 功能描述:IG,COPAK DPAK,G5,U,U,N,0.5,600 - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 6.3A 35W DPAK 制造商:International Rectifier 功能描述:TUBE / IG,COPAK DPAK,G5,U,U,N,0.5,600
IRGR2B60KDTRLPBF 制造商:International Rectifier 功能描述:IG,COPAK DPAK,G5,U,U,N,0.5,600 - Tape and Reel 制造商:International Rectifier 功能描述:IGBT 600V 6.3A 35W DPAK 制造商:International Rectifier 功能描述:T&R / IG,COPAK DPAK,G5,U,U,N,0.5,600