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参数资料
| 型号： | IRGPF50 |
| 文件页数： | 2/6页 |
| 文件大小： | 110K |
| 代理商： | IRGPF50 |
C-268
IRGPF50F
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
----
81
----
16
----
29
----
32
----
22
----
200
----
130
----
1.1
----
1.8
----
2.9
----
32
----
20
----
480
----
450
----
5.7
----
13
----
2300
----
180
----
27
Conditions
120
24
44
----
----
280
180
----
----
4.1
----
----
----
----
----
----
----
----
----
I
C
= 28A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 28A, V
CC
= 720V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 28A, V
CC
= 720V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 5.0
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
900
----
20
----
----
0.74
----
2.1
----
2.7
----
2.4
3.0
----
----
-9.7
12
18
----
----
----
----
2000
----
----
±100
Conditions
----
----
----
2.7
----
----
5.5
----
----
250
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 28A
I
C
= 51A
I
C
= 28A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 28A
V
GE
= 0V, V
CE
= 900V
V
GE
= 0V, V
CE
= 900V, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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