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参数资料
| 型号： | IRGPF50 |
| 文件页数： | 3/6页 |
| 文件大小： | 110K |
| 代理商： | IRGPF50 |
C-269
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPF50F
0
20
40
60
0.1
1
10
100
L
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
1
10
100
1000
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
1
10
100
1000
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
相关PDF资料 |
PDF描述 |
|---|---|
| IRGPF50F | Insulated Gate Bipolar Transistors (IGBTs)(快速绝缘栅型双极型晶体管) |
| IRGPH40K | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 103A I(C) | TO-247AC |
| IRGPH40KD2 | |
| IRGPH50K | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 36A I(C) | TO-247AC |
| IRGPH50KD2 | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGPF50F | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| IRGPH20M | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20S | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
| IRGPH30MD2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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