- 您现在的位置：买卖IC网 > PDF目录384501 > IRGS30B60K (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR PDF资料下载
参数资料
| 型号： | IRGS30B60K |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 1/13页 |
| 文件大小： | 328K |
| 代理商： | IRGS30B60K |
INSULATED GATE BIPOLAR TRANSISTOR
10/8/03
www.irf.com
1
IRGB30B60K
IRGS30B60K
IRGSL30B60K
V
CES
= 600V
I
C
= 50A, T
C
=100°C
at T
J
=175°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.95V
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS30B60K
TO-220AB
IRGB30B60K
TO-262
IRGSL30B60K
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Max.
600
78
50
120
120
2500
±20
370
180
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.41
–––
62
40
–––
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
Weight
g
相关PDF资料 |
PDF描述 |
|---|---|
| IRGSL30B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS30B60 | LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| IRGB4045DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGB4055PBF | Advanced Trench IGBT Technology |
| IRGB4059DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGS30B60KPBF | 功能描述:IGBT 晶体管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGS30B60KPBF | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRGS30B60KTRRP | 功能描述:IGBT 模块 600V 30AD2PAK RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IRGS4045DPBF | 功能描述:IGBT 晶体管 IR IGBT 600V 6A, COPAK-D2PAK RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGS4045DPDF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE |
发布紧急采购，3分钟左右您将得到回复。