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| 型号： | IRGB4059DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 1/10页 |
| 文件大小： | 297K |
| 代理商： | IRGB4059DPBF |
WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB4059DPbF
1
www.irf.com
4/14/06
=
=
C
E
C
G
G
C
E
Gate
Collector
Emitter
E
G
n-channel
C
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of The Parts Tested for 4X Rated Current (I
LM
)
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Absolute Maximum Ratings
Parameter
Max.
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
W
°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
2.70
6.30
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-toSink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
0.5
80
1.44
g
°C/W
V
GE
600
8
4
16
16
8
4
16
± 20
± 30
56
28
-55 to + 175
300 (0.063 in. (1.6mm) from case)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGB4060DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB4061DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB4062DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB4064DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB4065PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 70A 3PIN TO-220 - Bulk 制造商:International Rectifier 功能描述:IGBT 300V TO-220 |
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