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参数资料
| 型号： | IRGB5B120KD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 1/12页 |
| 文件大小： | 225K |
| 代理商： | IRGB5B120KD |
IRGB5B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
8/18/04
Absolute Maximum Ratings
Parameter
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
TO-220 Package.
1
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
E
G
n-channel
C
V
CES
= 1200V
I
C
= 6.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 2.75V
TO-220AB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGB5B120KDPBF | 功能描述:IGBT 晶体管 1200V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB6B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
| IRGB6B60KD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 13A, Transistor Type:IGBT, DC Collector Current:13A, Collecto |
| IRGB6B60KDPBF | 功能描述:IGBT 晶体管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGB6B60KPBF | 功能描述:IGBT 晶体管 600V UltraFast 10-30kHz IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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