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参数资料
| 型号： | IRGB5B120KD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 2/12页 |
| 文件大小： | 225K |
| 代理商： | IRGB5B120KD |
IRGB5B120KD
2
www.irf.com
Note:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 50
.
Energy losses include "tail" and diode reverse recovery.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Qgc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
Min. Typ. Max. Units
1200 –––
–––
1.15
–––
2.75
–––
3.36
4.0
5.0
-11
–––
2.6
–––
–––
–––
66
–––
2.13 2.45
–––
2.38 2.75
–––
––– ±100
Conditions
–––
–––
3.0
3.7
6.0
––– mV/°C
–––
100
200
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
I
C
= 6.0A V
GE
= 15V
I
C
= 6.0A V
GE
= 15V T
J
= 125°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
V
CE
= 50V, I
C
= 6.0A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
F
= 6.0A
I
F
= 6.0A T
J
= 125°C
V
GE
= ±20V
V/°C
V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
V
FM
Diode Forward Voltage Drop
V
nA
I
GES
Gate-to-Emitter Leakage Current
8
Min. Typ. Max. Units
–––
25
–––
3.7
–––
13
–––
390
–––
330
–––
720
–––
22
–––
19
–––
100
–––
19
–––
440
–––
370
–––
810 1220
–––
21
–––
18
–––
110
–––
22
–––
370
–––
33
–––
11
Conditions
I
C
= 6.0A
V
CC
= 800V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V,R
G
= 50
,
L =3.7mH
Ls = 150nH
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V, R
G
= 50
L =3.7mH
Ls = 150nH, T
J
= 25°C
38
5.6
20
440
440
880
29
27
120
25
660
560
nC
μJ
T
J
= 25°C
ns
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V,R
G
= 50
,
L =3.7mH
Ls = 150nH
I
C
= 6.0A, V
CC
= 600V
V
GE
= 15V, R
G
= 50
L =3.7mH
Ls = 150nH, T
J
= 125°C
μJ
T
J
= 125°C
27
25
150
29
–––
–––
–––
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 24A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V,
T
J
= 150°C, Vp =1200V, R
G
= 50
V
CC
= 900V, V
GE
= +15V to 0V
T
J
= 125°C
V
CC
= 600V, I
F
= 6.0A, L = 2.0mH
V
GE
= 15V,R
G
= 50
,
Ls = 150nH
pF
μs
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current –––
–––
–––
360
160
9.0
–––
–––
–––
μJ
ns
A
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
Ref.Fig.
23
CT1
CT4
CT4
13,15
WF1WF2
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
CT4
R
G
=50
14, 16
CT4
WF1
WF2
22
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