参数资料
型号: IRGB4064DPBF
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 绝缘栅双极型晶体管,超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管
文件页数: 1/10页
文件大小: 381K
代理商: IRGB4064DPBF
WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPbF
1
www.irf.com
11/28/06
=
=
C
E
C
G
G
C
E
Gate
Collector
Emitter
E
G
n-channel
C
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Absolute Maximum Ratings
Parameter
Max.
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
600
20
10
40
40
20
10
40
±20
±30
101
50
A
V
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
W
°C
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
1.44
Max.
1.49
3.66
–––
62
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
g
°C/W
V
GE
-55 to + 175
300 (0.063 in. (1.6mm) from case)
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