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参数资料
| 型号： | IRGB4064DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 3/10页 |
| 文件大小： | 381K |
| 代理商： | IRGB4064DPBF |
IRGB4064DPbF
www.irf.com
3
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
CE
= 15V
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
Fig. 3
- Forward SOA,
T
C
= 25°C; T
J
≤
175°C
0
20
40
60
80 100 120 140 160 180
TC (°C)
0
4
8
12
16
20
24
IC
0
20
40
60
80 100 120 140 160 180
TC (°C)
0
20
40
60
80
100
120
Pt
10
100
1000
VCE (V)
1
10
100
IC
0
2
4
6
8
10
VCE (V)
0
10
20
30
40
IC
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
10
20
30
40
IC
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1
10
100
1000
VCE (V)
0.1
1
10
100
IC
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1msec
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