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参数资料
| 型号： | IRGB4064DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 6/10页 |
| 文件大小： | 381K |
| 代理商： | IRGB4064DPBF |
IRGB4064DPbF
6
www.irf.com
Fig. 20
- Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 19
- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 10A; T
J
= 175°C
Fig. 24
- Typical Gate Charge
vs. V
GE
I
CE
= 10A, L=600μH
Fig. 23
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 22
- Typ. V
GE
vs Short Circuit Time
V
CC
=400V, T
C
=25°C
Fig. 21
- Typical Diode E
RR
vs. I
F
T
J
= 175°C
0
200
400
600
800
1000
1200
diF /dt (A/μs)
5
10
15
20
IR
0
2
4
6
8
10 12 14 16 18 20 22
IF (A)
0
50
100
150
200
250
300
IR
RG = 10
RG = 22
RG = 47
RG = 100
8
10
12
14
16
VGE (V)
0
2
4
6
8
10
12
14
16
T
0
10
20
30
40
50
60
70
80
C
Tsc
Isc
0
500
1000
1500
diF /dt (A/μs)
300
400
500
600
700
800
900
QR
10
22
47
100
20A
10A
5.0A
0
4
8
12
16
20
24
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VG
300V
400V
0
20
40
60
80
100
VCE (V)
1
10
100
1000
C
Cies
Coes
Cres
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