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参数资料
| 型号： | IRGB4064DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 5/10页 |
| 文件大小： | 381K |
| 代理商： | IRGB4064DPBF |
IRGB4064DPbF
www.irf.com
5
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 22
; V
GE
= 15V.
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 10A; V
GE
= 15V
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 22
; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 10A
0
4
8
12
16
20
24
IC (A)
0
100
200
300
400
500
600
E
EOFF
EON
0
4
8
12
16
20
24
IC (A)
1
10
100
1000
S
tR
tdOFF
tF
tdON
0
25
50
75
100
125
RG (
)
0
50
100
150
200
250
300
350
E
EON
EOFF
0
25
50
75
100
125
RG (
)
10
100
1000
S
tR
tdOFF
tF
tdON
0
4
8
12
16
20
24
IF (A)
0
4
8
12
16
20
24
IR
RG = 100
RG =10
RG =22
RG =47
0
25
50
75
100
125
RG (
)
0
4
8
12
16
20
IR
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