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参数资料
| 型号： | IRGB4064DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 2/10页 |
| 文件大小： | 381K |
| 代理商： | IRGB4064DPBF |
IRGB4064DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
θ
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.47
—
V/°C V
GE
= 0V, I
C
= 500μA (-55°C-175°C)
1.6
1.91
I
C
= 10A, V
GE
= 15V, T
J
= 25°C
1.9
—
V
I
C
= 10A, V
GE
= 15V, T
J
= 150°C
2.0
—
I
C
= 10A, V
GE
= 15V, T
J
= 175°C
—
6.5
V
V
CE
= V
GE
, I
C
= 275μA
-11
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
6.9
—
S
V
CE
= 50V, I
C
= 10A, PW = 80μs
—
25
μA
V
GE
= 0V, V
CE
= 600V
328
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
2.5
3.1
V
I
F
= 10A
1.7
—
I
F
= 10A, T
J
= 175°C
—
±100
nA
V
GE
= ±20V
Ref.Fig
V
GE
= 0V, I
C
= 100μA
V
CE(on)
Collector-to-Emitter Saturation Voltage
5,6,7,9,
10 ,11
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
8
V
FM
Diode Forward Voltage Drop
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
21
32
5.3
8.0
8.9
13
29
71
200
308
229
339
27
37
15
23
79
90
21
30
99
—
316
—
415
—
27
—
16
—
98
—
33
—
594
—
49
—
17
—
Ref.Fig
I
C
= 10A
V
GE
= 15V
V
CC
= 400V
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
R
G
= 22
, L = 1.0mH, T
J
= 25°C
24
nC
CT1
μJ
CT4
Energy losses include tail & diode reverse recovery
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 22
, L = 1.0mH, T
J
= 25°C
CT4
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
=22
, L=1.0mH, T
J
= 175°C
13,15
CT4
Energy losses include tail & diode reverse recovery
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 22
, L = 1.0mH, T
J
= 175°C
WF1,WF2
14,16
CT4
WF1,WF2
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 40A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 10A
V
GE
= 15V, Rg = 22
, L=1.0mH
22
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
22, CT3
WF4
Erec
t
rr
I
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
191
62
16
—
—
—
μJ
ns
A
17,18,19
20,21
WF3
CT6
9,10,11,12
Conditions
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