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参数资料
| 型号： | IRH9250 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d-为200V，的Rds（on）\u003d 0.315ohm，身份证\u003d- 14A条） |
| 文件页数： | 2/4页 |
| 文件大小： | 163K |
| 代理商： | IRH9250 |
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.12
0.83
30
—
Typical socket mount
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-200
—
Typ. Max. Units
—
—
-0.10
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
4.0
—
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
-25
-250
VGS = -12V, ID = -9A
VGS = -12V, ID = -14A
VDS = VGS, ID = -1.0 mA
VDS > -15V, IDS = -9A
VDS = 0.8 x Max. Rating,VGS = 0V
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
VGS = - 20V
VGS = 20V
VGS = -12V, ID = -14A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
200
45
85
60
240
225
175
—
VDD = -50V, ID = -14A, RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
310
55
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulse Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
—
—
Test Conditions
-14
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
—
—
-56
—
—
—
—
—
—
-3.6
740
7.0
V
ns
μ
C
T
j
= 25°C, IS = -14A, VGS = 0V
Tj = 25°C, IF = -14A, di/dt
≤
-100 A/
μ
s
VDD
≤
-14V
IRH9250 Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
Min. Typ. Max. Units
Test Conditions
K/W
Notes: See page 4
A
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