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参数资料
| 型号： | IRHM2C50SEDPBF |
| 元件分类： | JFETs |
| 英文描述： | 10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 98K |
| 代理商： | IRHM2C50SEDPBF |
IRHM2C50SE, IRHM7C50SE Devices
www.irf.com
3
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
Min Typ Max
Units
Test Conditions
VDSS
Drain-to-Source Voltage
—
480
—
480
V
Applied drain-to-source voltage during
gamma-dot
IPP
—
6.4
—
6.4
—
A
Peak radiation induced photo-current
di/dt
—
16
—
2.3
—
A/sec Rate of rise of photo-current
L1
—
20
—
137
—
H
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Fluence
Range
VDSBias
VGS Bias
Ion
(MeV/mg/cm2)
(ions/cm2)
(m)
(V)
Ni
28
1x 105
~28
480
-5
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
5 and a VDS bias condition equal to 80% of the de-
vice rated voltage per note 6. Pre and Post-irradia-
tion limits of the devices irradiated to 0.5 x 105 Rads
(Si) and 1 x 105 Rads (Si) are identical and pre-
sented in Table 1, column 1, IRHM2C50SE and col-
umn 2, IRHM7C50SE. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used. Both pre- and post-irradiation perfor-
mance are tested and specified using the same drive
circuitry and test conditions in order to provide a di-
rect comparison. It should be noted that at a radiation
level of 1 x 105 Rads (Si) the only parameter limit
change is VGSTh minimum .
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec ( See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 1. Low Dose Rate
IRHM2C50SE IRHM7C50SE
Parameter
50 KRads (Si)
100 K Rads (Si)
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
600
—
600
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.5
4.5
2.0
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
50
—
50
A
VDS=0.8 x Max Rating, VGS =0V
RDS(on)1
Static Drain-to-Source
—0.6
—
0.6
VGS = 12V, ID =6.5A
On-State Resistance One
VSD
Diode Forward Voltage
—
1.6
—
1.6
V
TC = 25°C, IS = 10.4A,VGS = 0V
相关PDF资料 |
PDF描述 |
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| IRHM2C50SE | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
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| IRHM7360SESCS | 22 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
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