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参数资料
| 型号： | IRHM2C50SEDPBF |
| 元件分类： | JFETs |
| 英文描述： | 10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/8页 |
| 文件大小： | 98K |
| 代理商： | IRHM2C50SEDPBF |
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
6
www.irf.com
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width
≤ 1 s
Duty Factor
≤ 0.1 %
RD
VGS
RG
D.U.T.
12V
+
-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0
2
4
6
8
10
12
T , Case Temperature ( C)
I
,
Drain
Current
(A)
°
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal
Response
(Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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