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参数资料
| 型号： | IRHM7450SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 500V及的Rds（on）\u003d 0.51ohm，身份证\u003d 12A条） |
| 文件页数： | 2/12页 |
| 文件大小： | 311K |
| 代理商： | IRHM7450SE |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
500
—
Typ
—
0.6
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
4.0
—
—
—
— 0.50
VGS = 12V, ID = 11A
—
4.0
V
VDS = VGS, ID = 1.0mA
—
—
S (
)
VDS > 15V, IDS = 7.0A
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
100
—
-100
—
150
—
30
nC
VDS = Max Rating x 0.5
—
75
—
45
VDD = 250V, ID = 11A,
—
190
—
190
—
130
8.7
—
nH
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
0.45
VGS = 12V, ID = 7.0A
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
VGS = 20V
VGS = -20V
VGS =12V, ID = 11A
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
330
52
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Pre-Irradiation
nA
ns
μ
A
Measured from drain
lead, 6mm (0.25 in)
from package to center
Modified MOSFET sym-
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
11
44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
1100
16
V
ns
μ
C
T
j
= 25°C, IS =11A, VGS = 0V
Tj = 25°C, IF = 11A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
Min Typ Max
—
—
—
—
— 0.21 — Typical socket mount
Units
Test Conditions
0.83
48
°C/W
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