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参数资料
| 型号： | IRHM9150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 1/8页 |
| 文件大小： | 136K |
| 代理商： | IRHM9150 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
-22
-14
-88
150
1.2
±20
500
-22
15
-23
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
PD - 90889D
Pre-Irradiation
International Rectifier’s RADHard HEXFET
TM
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
2/18/03
www.irf.com
1
TO-254AA
Product Summary
Part Number Radiation Level R
DS(on)
IRHM9150 100K Rads (Si)
IRHM93150 300K Rads (Si)
I
D
QPL Part Number
JANSR2N7422
JANSF2N7422
0.080
0.080
-22A
-22A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
For footnotes refer to the last page
IRHM9150
JANSR2N7422
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
RAD Hard
HEXFET
T
ECHNOLOGY
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM93150 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM9160 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
| IRHM9230 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| IRHM9250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
| IRHM93250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM9150D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9150SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM9150U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9160 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| IRHM9160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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