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参数资料
| 型号： | IRHM9150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 5/8页 |
| 文件大小： | 136K |
| 代理商： | IRHM9150 |
www.irf.com
5
Pre-Irradiation
IRHM9150
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-22A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
0.0
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM93150 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM9160 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
| IRHM9230 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| IRHM9250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
| IRHM93250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM9150D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9150SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM9150U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9160 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| IRHM9160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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