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参数资料
| 型号： | IRHM9150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 8/8页 |
| 文件大小： | 136K |
| 代理商： | IRHM9150 |
IRHM9150
Pre-Irradiation
8
www.irf.com
Foot Notes:
Case Outline and Dimensions — TO-254AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/03
6.60 [.260]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
A
1.14 [.045]
0.36 [.014]
B A
3X
B
20.32 [.800]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
6.60 [.260]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
4.06 [.160]
B
R 1.52 [.060]
1
2
3
4.82 [.190]
3.81 [.150]
20.32 [.800]
3.78 [.149]
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L=2.1mH
Peak IL = -22A, VGS =-12V
ISD
≤
-22A, di/dt
≤
-450A/
μ
s,
VDD
≤
-100V, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
1 = DRAIN
PIN ASSIGNMENTS
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM9150D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9150SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM9150U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9160 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| IRHM9160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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