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参数资料
| 型号： | IRHM7450SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 500V及的Rds（on）\u003d 0.51ohm，身份证\u003d 12A条） |
| 文件页数： | 5/12页 |
| 文件大小： | 311K |
| 代理商： | IRHM7450SE |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
www.irf.com
5
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress
Equals 80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of
V
GSS
Equals 12 Volts
During Radiation
Post-Irradiation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM7450SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7450SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7450U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254VAR |
| IRHM7460SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM7460SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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