- 您现在的位置：买卖IC网 > PDF目录384503 > IRHMS597260 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PDF资料下载
参数资料
| 型号： | IRHMS597260 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（低阻值到254AA） |
| 文件页数： | 2/8页 |
| 文件大小： | 214K |
| 代理商： | IRHMS597260 |
IRHMS597260
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-32
-128
-5.0
300
6.0
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = -32A, VGS = 0V
Tj = 25°C, IF =-32A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.25
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
0.103
VGS = -12V, ID = -20A
-2.0
23
—
—
—
—
—
—
-4.0
—
-10 A
-25
VGS = 0V, TJ = 125°C
-100
100 VGS = 20V
— 175 VGS =-12V, ID = -32A
—
75
nC
—
70
— 35 VDD = -100V, ID = -32A
—
50
—
75
—
100
4.0
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
V
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -20A
S (
)
VDS = -160V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
VGS = -20V
VDS = -100V
VGS =-12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
7170
920
86
— VGS = 0V, VDS = -25V
—
pF
—
f = 1.0MHz
nA
ns
Note: Corresponding Spice and Saber models are available on the G&S Website.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.6
—
48
°C/W
Typical socket mount
相关PDF资料 |
PDF描述 |
|---|---|
| IRHN2C50SE | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| IRHN3150 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| IRHN4150 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| IRHN7150 | Female Disconnect Solderless Terminal; Wire Size (AWG):12-10; Tab Width:0.250"; Insulator Color:Yellow; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| IRHN7450 | HEXFET TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHMS597260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS597260SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS597Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHMS597Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS597Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
发布紧急采购，3分钟左右您将得到回复。