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参数资料
| 型号： | IRHN2C50SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 600V电压的Rds（on）\u003d 0.60ohm，身份证\u003d 10.4A） |
| 文件页数： | 1/4页 |
| 文件大小： | 110K |
| 代理商： | IRHN2C50SE |
Product Summary
Part Number
IRHN2C50SE
IRHN7C50SE
BV
DSS
R
DS(on)
I
D
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Light-Weight
I
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHN2C50SE, IRHN7C50SE
10.4
6.5
41.6
150
1.2
±20
500
10.4
15
3.0
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 seconds)
2.6 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600 Volt, 0.60
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Provisional Data Sheet No. PD-9.1476A
Pre-Radiation
IRHN2C50SE
IRHN7C50SE
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
o
C
A
600V
0.60
10.4A
Next Data Sheet
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