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参数资料
| 型号： | IRHN2C50SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 600V电压的Rds（on）\u003d 0.60ohm，身份证\u003d 10.4A） |
| 文件页数： | 2/4页 |
| 文件大小： | 110K |
| 代理商： | IRHN2C50SE |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
RthJC
0.83
RthJ-PCB
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
10.4
41.6
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.62
1200
16
V
ns
μ
C
T
j
= 25°C, IS = 10.4A, VGS = 0V
Tj = 25°C, IF = 10.4A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
600
—
Typ. Max. Units
—
—
0.45
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.5
3.0
—
—
—
—
—
—
—
—
0.60
0.65
4.5
—
50
250
VGS = 12V, ID = 6.5A
VGS = 12V, ID = 10.4A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 6.5A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 10.4A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
150
30
75
55
190
210
130
—
VDD = 300V, ID = 10.4A,
RG = 2.35
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
300
61
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
IRHN2C50SE, IRHN7C50SE Devices
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
K/W
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