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参数资料
| 型号： | IRHN2C50SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 600V电压的Rds（on）\u003d 0.60ohm，身份证\u003d 10.4A） |
| 文件页数： | 3/4页 |
| 文件大小： | 110K |
| 代理商： | IRHN2C50SE |
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
IRHN2C50SE, IRHN7C50SE Devices
Radiation Characteristics
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 0.5 x 10
5
Rads (Si)
and 1 x 10
5
Rads (Si) are identical and are pre-
sented in Table 1, column 1, IRHN2C50SE and
IRHN7C50SE, respectively. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
V
nA
Table 1. Low Dose Rate
Parameter
IRHN2C50SE
50K Rads (Si)
IRHN7C50SE
100K Rads (Si)
Units
Min.
600
2.0
—
—
—
—
Test Conditions
Max.
—
4.5
100
-100
50
0.60
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Static Drain-to-Source
On-State Resistance One
V
SD
Diode Forward Voltage
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
= 6.5A
μ
A
—
1.62
V
TC = 25°C, IS = 10.4A, V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
480
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
480
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
2.3 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
20
6.4
—
—
—
16
—
—
—
137
6.4
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~35
V
DS
Bias
(V)
480
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
600
V
Ni
To Order
Next Data Sheet
Index
Previous Datasheet
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